Высокоэффективные GaInP/GaAs-фотопреобразователи лазерной линии 600 nm

نویسندگان

چکیده

Изготовлены оптимизированные фотопреобразователи на основе гетероструктур GaInP/GaAs, выращенных методом металлоорганической газофазной эпитаксии, для работы с лазерным излучением высокой мощности зелено-красного спектрального диапазона. Для формирования лицевой контактной сетки приборов исследованы контактные системы Au(Ge)/Ni/Au и Pd/Ge/Au. В результате фотопреобразователь лазерной линии длиной волны 600 nm Pd/Ge/Au-контактом демонстрировал КПД более 50% вплоть до плотности падающего излучения 30 W/cm 2 максимальным значением 54.4% при 7 . Ключевые слова: фотопреобразователь, лазерное излучение, металлоорганическая газофазная эпитаксия (МОСГФЭ), КПД, спектральная чувствительность.

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ژورنال

عنوان ژورنال: Pis?ma v Žurnal tehni?eskoj fiziki

سال: 2023

ISSN: ['1726-7471', '0320-0116']

DOI: https://doi.org/10.21883/pjtf.2023.06.54814.19458